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Part Number Overview
Manufacturer Part Number
IXTY3N60P
Description
MOSFET N-CH 600V 3A TO252
Detailed Description
N-Channel 600 V 3A (Tc) 70W (Tc) Surface Mount TO-252AA
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
PolarHV™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
411 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IXTY3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTY3N60P
Documents & Media
Datasheets
()
PCN Obsolescence/ EOL
1(Mule Devices EOL 21/Mar/2018)
HTML Datasheet
1(IXT(A,P,Y) 3N60P)
Quantity Price
-
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