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Part Number Overview
Manufacturer Part Number
PBSS9110AS,126
Description
TRANS PNP 100V 1A TO92-3
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 1 A 100MHz 830 mW Through Hole TO-92-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
320mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 5V
Power - Max
830 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PBSS9
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
PBSS9110AS AMO
934057765126
PBSS9110AS AMO-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PBSS9110AS,126
Documents & Media
Datasheets
1(PBSS9110AS)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PBSS9110AS)
Quantity Price
-
Substitutes
-