Part Number Overview

Manufacturer Part Number
NTE2932
Description
MOSFET N-CH 200V 21.3A TO3PML
Detailed Description
N-Channel 200 V 21.3A (Tc) 90W (Tc) Through Hole TO-3PML
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks

Technical specifications

Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
21.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 10.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
123 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PML
Package / Case
TO-3P-3 Full Pack

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NTE Electronics, Inc NTE2932

Documents & Media

Datasheets
1(NTE2932 Datasheet)
Environmental Information
()
HTML Datasheet
1(NTE2932 Datasheet)

Quantity Price

Quantity: 100
Unit Price: $6.58
Packaging: Bag
MinMultiplier: 1
Quantity: 50
Unit Price: $6.74
Packaging: Bag
MinMultiplier: 1
Quantity: 20
Unit Price: $7.14
Packaging: Bag
MinMultiplier: 1
Quantity: 10
Unit Price: $7.53
Packaging: Bag
MinMultiplier: 1
Quantity: 1
Unit Price: $7.93
Packaging: Bag
MinMultiplier: 1

Substitutes

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