China
Spain
Rusia
Italy
GermanyTP65H070LDG
Part Number Overview
Manufacturer Part Number
TP65H070LDG
Description
GANFET N-CH 650V 25A 3PQFN
Detailed Description
N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
Manufacturer
Transphorm
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Transphorm
Series
TP65H070L
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
Base Product Number
TP65H070
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP65H070LDG
Documents & Media
Datasheets
1(TP65H070L Datasheet)
Reference Design Library
1(TDHBG1200DC100-KIT: 1.2 kW Half-Bridge Buck 2:1 or Boost 1:2)
Quantity Price
-
Substitutes
-