Part Number Overview

Manufacturer Part Number
SPP16N50C3HKSA1
Description
MOSFET N-CH 560V 16A TO220-3
Detailed Description
N-Channel 560 V 16A (Tc) 160W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
560 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
SPP16N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SPP16N50C3XTIN
SPP16N50C3IN
SPP16N50C3XK
IFEINFSPP16N50C3HKSA1
SPP16N50C3IN-ND
SPP16N50C3X
SPP16N50C3XTIN-ND
SPP16N50C3
SPP16N50C3IN-NDR
2156-SPP16N50C3HKSA1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP16N50C3HKSA1

Documents & Media

Datasheets
1(SPP/SPI/SPA16N50C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPP/SPI/SPA16N50C3)

Quantity Price

-

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