Part Number Overview

Manufacturer Part Number
IPA50R190CE
Description
MOSFET N-CH 500V 18.5A TO220-FP
Detailed Description
N-Channel 500 V 18.5A (Tc) 32W (Tc) Through Hole PG-TO220-FP
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs
47.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1137 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA50R

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-IPA50R190CE
IPA50R190CEXKSA1
SP000848220

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA50R190CE

Documents & Media

Datasheets
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Other Related Documents
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Quantity Price

-

Substitutes

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Unit Price. : $2.88000
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