Product Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
50V
Current - Continuous Drain (Id) @ 25°C
330mA (Ta), 170mA (Ta)
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V, 0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V, 36pF @ 25V
Power - Max
330mW (Ta), 1.09W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-666
Base Product Number
NX1029