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Part Number Overview
Manufacturer Part Number
FDP8870
Description
MOSFET N-CH 30V 156A TO-220AB
Detailed Description
N-Channel 30 V 19A (Ta), 156A (Tc) 160W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FDP88
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-FDP8870
2156-FDP8870-OS
FAIFSCFDP8870
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDP8870
Documents & Media
Datasheets
1(FDP8870 Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 8/Apr/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Mold Chg 28/Oct/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(TO220B03 Pkg Drawing)
Product Drawings
1(TO220B03 Pkg Drawing)
Quantity Price
-
Substitutes
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