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Part Number Overview
Manufacturer Part Number
SIHD9N60E-GE3
Description
MOSFET N-CH 600V 9A DPAK
Detailed Description
N-Channel 600 V 9A (Tc) 78W (Tc) Surface Mount TO-252AA
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
368mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
778 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SIHD9
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHD9N60E-GE3CT-ND
SIHD9N60E-GE3TRINACTIVE
SIHD9N60E-GE3DKR
SIHD9N60E-GE3DKR-ND
SIHD9N60E-GE3DKRINACTIVE
SIHD9N60E-GE3TR
SIHD9N60E-GE3CT
SIHD9N60E-GE3TR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHD9N60E-GE3
Documents & Media
Datasheets
1(SIHD9N60E)
Featured Product
1(MOSFETs in 5G)
HTML Datasheet
1(SIHD9N60E)
Quantity Price
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Substitutes
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