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Part Number Overview
Manufacturer Part Number
2SD600KF
Description
BIP NPN 1A 100V
Detailed Description
Bipolar (BJT) Transistor NPN 120 V 1 A 130MHz 1 W Through Hole TO-126
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,902
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 50mA, 5V
Power - Max
1 W
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SD600KF
ONSONS2SD600KF
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD600KF
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1902
Unit Price: $0.16
Packaging: Bulk
MinMultiplier: 1902
Packaging: Bulk
MinMultiplier: 1902
Substitutes
-