China
Spain
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Italy
GermanyHFA3127MJ/883
Part Number Overview
Manufacturer Part Number
HFA3127MJ/883
Description
DUAL MARKED (5962-9474901MEA)
Detailed Description
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Through Hole 16-CERDIP
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
12
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
5 NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
3.5dB @ 1GHz
Gain
-
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 2V
Current - Collector (Ic) (Max)
65mA
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Through Hole
Package / Case
16-CDIP (0.300", 7.62mm)
Supplier Device Package
16-CERDIP
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-HFA3127MJ/883
HARHARHFA3127MJ/883
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Harris Corporation HFA3127MJ/883
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 12
Unit Price: $26.72
Packaging: Bulk
MinMultiplier: 12
Packaging: Bulk
MinMultiplier: 12
Substitutes
-