Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
190pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
4-VSFN Exposed Pad
Supplier Device Package
5-DFN (8x8)
Operating Temperature - Junction
175°C (Max)
Base Product Number
WNSC0