SUP60N10-18P-E3

Part Number Overview

Manufacturer Part Number

SUP60N10-18P-E3

Description

MOSFET N-CH 100V 60A TO220AB

Detailed Description

N-Channel 100 V 60A (Tc) 3.75W (Ta), 150W (Tc) Through Hole TO-220AB

Manufacturer

Vishay Siliconix

Standard LeadTime

Edacad Model

Standard Package

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Vishay Siliconix

Series

TrenchFET®

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

18.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600 pF @ 50 V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Base Product Number

SUP60

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

-

Documents & Media

PCN Obsolescence/ EOL

1(SIL-0632014 16/Apr/2014)

HTML Datasheet

1(SUP60N10-18P)

Quantity Price

-

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2-1616963-0 0.125X1.0FLT6061T6511-48 1206Y2K09P10CQT CRCW06038M25FKEA SMM-133-01-H-S-P

SUP60N10-18P-E3

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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