Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 1200 V
Capacitance @ Vr, F
640pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
SICRB101200