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Part Number Overview
Manufacturer Part Number
R6020KNZ1C9
Description
MOSFET N-CH 600V 20A TO247
Detailed Description
N-Channel 600 V 20A (Tc) 231W (Tc) Through Hole TO-247
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
R6020KNZ1C9 Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
R6020KNZ1C9CTINACTIVE
R6020KNZ1C9CT
R6020KNZ1C9TR-ND
R6020KNZ1C9DKR-ND
R6020KNZ1C9DKRINACTIVE
R6020KNZ1C9TR
R6020KNZ1C9CT-ND
R6020KNZ1C9DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6020KNZ1C9
Documents & Media
Datasheets
1(R6020KNZ1C9)
Other Related Documents
()
Environmental Information
()
PCN Obsolescence/ EOL
1(R60YYY 05/Mar/2020)
EDA Models
1(R6020KNZ1C9 Models)
Simulation Models
1(R6020KNZ1 Spice Model)
Quantity Price
-
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