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Part Number Overview
Manufacturer Part Number
SUP90N04-3M3P-GE3
Description
MOSFET N-CH 40V 90A TO220AB
Detailed Description
N-Channel 40 V 90A (Tc) 3.1W (Ta), 125W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
SUP90N04-3M3P-GE3 Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
131 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5286 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP90
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SUP90N043M3PGE3
SUP90N04-3M3P-GE3CT
SUP90N04-3M3P-GE3CT-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP90N04-3M3P-GE3
Documents & Media
Datasheets
1(Packaging Information)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SUP90N04-3M3P-GE3)
EDA Models
1(SUP90N04-3M3P-GE3 Models)
Quantity Price
-
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