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Part Number Overview
Manufacturer Part Number
IRF820
Description
2.5A, 500V, 3.000 OHM, N-CHANNEL
Detailed Description
N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
503
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
PowerMESH™ II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF8
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-IRF820
HARHARIRF820
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRF820
Documents & Media
Datasheets
1(IRF820)
Quantity Price
Quantity: 503
Unit Price: $0.6
Packaging: Bulk
MinMultiplier: 503
Packaging: Bulk
MinMultiplier: 503
Substitutes
-