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Part Number Overview
Manufacturer Part Number
BSC886N03LSGATMA1
Description
MOSFET N-CH 30V 13A/65A TDSON
Detailed Description
N-Channel 30 V 13A (Ta), 65A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Base Product Number
BSC886
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BSC886N03LS GTR-ND
BSC886N03LS GDKR-ND
BSC886N03LS GCT-ND
BSC886N03LSGATMA1CT
BSC886N03LSGATMA1DKR
BSC886N03LS GCT
BSC886N03LS GDKR
BSC886N03LS G-ND
2156-BSC886N03LSGATMA1
BSC886N03LSGATMA1TR
SP000475950
IFEINFBSC886N03LSGATMA1
BSC886N03LS G
BSC886N03LSG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC886N03LSGATMA1
Documents & Media
Datasheets
1(BSC886N03LS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Other
1(Multiple Changes 09/Jul/2014)
HTML Datasheet
1(BSC886N03LS G)
Quantity Price
-
Substitutes
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