Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs
450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 4.5V, 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V, 62pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6
Base Product Number
FDG6321