Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id
5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1526 pF @ 500 V
Power Dissipation (Max)
262W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Base Product Number
SCT3030