Part Number Overview

Manufacturer Part Number
HUF75332S3S
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 55 V 52A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
683
Supplier Stocks

Technical specifications

Mfr
Harris Corporation
Series
UltraFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
19mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

HARHARHUF75332S3S
2156-HUF75332S3S

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation HUF75332S3S

Documents & Media

Datasheets
1(HUF75332P3)

Quantity Price

Quantity: 683
Unit Price: $0.44
Packaging: Bulk
MinMultiplier: 683

Substitutes

-