Part Number Overview

Manufacturer Part Number
GAN041-650WSBQ
Description
GAN041-650WSB/SOT429/TO-247
Detailed Description
N-Channel 650 V 47.2A 187W Through Hole TO-247-3
Manufacturer
Nexperia USA Inc.
Standard LeadTime
27 Weeks
Edacad Model
GAN041-650WSBQ Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
Nexperia USA Inc.
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47.2A
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
187W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

1727-GAN041-650WSBQ
5202-GAN041-650WSBQTR
934661752127

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. GAN041-650WSBQ

Documents & Media

Datasheets
1(GAN041-650WSB)
Product Brief
1(GaN FETs brochure)
Mfg Application Notes
1(Circuit design & PCB layout recommendations for GaN FET half bridges)
Video File
1(What is CCPAK? (Surface-mount packaging for high-power FETs) - Quick Learning)
Featured Product
1(GaN FETs)
PCN Assembly/Origin
1(Mult Dev Wafer Test Chgs 4/Feb/2022)
EDA Models
1(GAN041-650WSBQ Models)

Quantity Price

Quantity: 510
Unit Price: $12.44825
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $13.736
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $14.59467
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $18.03
Packaging: Tube
MinMultiplier: 1

Substitutes

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