Part Number Overview

Manufacturer Part Number
HUFA76609D3ST
Description
MOSFET N-CH 100V 10A TO252AA
Detailed Description
N-Channel 100 V 10A (Tc) 49W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
701
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
425 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
49W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-HUFA76609D3ST
2156-HUFA76609D3ST-FSTR-ND
FAIFSCHUFA76609D3ST

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUFA76609D3ST

Documents & Media

Datasheets
1(HUFA76609D3S)

Quantity Price

Quantity: 701
Unit Price: $0.43
Packaging: Bulk
MinMultiplier: 701

Substitutes

-