Part Number Overview

Manufacturer Part Number
BSC882N03MSGATMA1
Description
MOSFET N-CH 34V 22A/100A TDSON
Detailed Description
N-Channel 34 V 22A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
34 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

BSC882N03MS GTR-ND
BSC882N03MSG
BSC882N03MS GCT-ND
BSC882N03MSGATMA1DKR
BSC882N03MSGATMA1TR
SP000507406
BSC882N03MS G-ND
BSC882N03MS GCT
2156-BSC882N03MSGATMA1
INFINFBSC882N03MSGATMA1
BSC882N03MS G
BSC882N03MS GDKR
BSC882N03MS GDKR-ND
BSC882N03MSGATMA1CT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC882N03MSGATMA1

Documents & Media

Datasheets
1(BSC882N03MS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSC882N03MS G)

Quantity Price

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