Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.5A, 6.3A
Rds On (Max) @ Id, Vgs
17.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
605pF @ 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Supplier Device Package
8-WDFN (3x3)
Base Product Number
NTLLD4951