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Part Number Overview
Manufacturer Part Number
JANTXV2N6849
Description
MOSFET P-CH 100V 6.5A TO205AF
Detailed Description
P-Channel 100 V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34.8 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/564
Mounting Type
Through Hole
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-JANTXV2N6849
JANTXV2N6849-MIL
JANTXV2N6849-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation JANTXV2N6849
Documents & Media
Datasheets
1(2N6849)
Environmental Information
()
PCN Obsolescence/ EOL
()
HTML Datasheet
1(2N6849)
Quantity Price
-
Substitutes
-