HUF75631P3

Part Number Overview

Manufacturer Part Number

HUF75631P3

Description

MOSFET N-CH 100V 33A TO220-3

Detailed Description

N-Channel 100 V 33A (Tc) 120W (Tc) Through Hole TO-220-3

Manufacturer

onsemi

Standard LeadTime

Edacad Model

HUF75631P3 Models

Standard Package

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

onsemi

Series

UltraFET™

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

79 nC @ 20 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1220 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Base Product Number

HUF75

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

-

Documents & Media

Datasheets

1(HUF75631P3,S3ST)

Environmental Information

1(onsemi RoHS)

HTML Datasheet

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EDA Models

1(HUF75631P3 Models)

Product Drawings

1(TO220B03 Pkg Drawing)

Quantity Price

-

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TE2000B470RJ Q-2V02V0003001M DP83640TVV CX10S-0H0DGC-P-A-DK00000 821302

HUF75631P3

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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