Part Number Overview

Manufacturer Part Number
SCT2160KEC
Description
SICFET N-CH 1200V 22A TO247
Detailed Description
N-Channel 1200 V 22A (Tc) 165W (Tc) Through Hole TO-247
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
208mOhm @ 7A, 18V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
SCT2160

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT2160KEC

Documents & Media

Datasheets
()
Other Related Documents
()
Product Training Modules
1(SiC Trench MOSFETs)
Video File
1(ROHM 4-pin SiC Power MOSFETs | allaboutcomponents.com Daily)
Environmental Information
()
Featured Product
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Oct/2021)
HTML Datasheet
1(TO-247 Taping Spec)
Simulation Models
1(SCT2160KE Spice Model)
Reliability Documents
1(MOS-2GTHD Reliability Test)

Quantity Price

-

Substitutes

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