Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-XFBGA, FCBGA
Supplier Device Package
EFCP2718-6CE-020
Base Product Number
EFC6602