Part Number Overview

Manufacturer Part Number
IPB80N06S3L-05
Description
MOSFET N-CH 55V 80A TO263-3
Detailed Description
N-Channel 55 V 80A (Tc) 165W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 69A, 10V
Vgs(th) (Max) @ Id
2.2V @ 115µA
Gate Charge (Qg) (Max) @ Vgs
273 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
13060 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB80N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPB80N06S3L05XT
IPB80N06S3L05ATMA1
IPB80N06S3L05
IPB80N06S3L-05-ND
IPB80N06S3L-05INTR
SP000102221
IPB80N06S3L-05INDKR
IPB80N06S3L-05INCT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB80N06S3L-05

Documents & Media

Datasheets
1(IPB/IPI/IPP80N06S3L-05)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB/IPI/IPP80N06S3L-05)

Quantity Price

-

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