China
Spain
Rusia
Italy
GermanySIA425EDJ-T1-GE3
Part Number Overview
Manufacturer Part Number
SIA425EDJ-T1-GE3
Description
MOSFET P-CH 20V 4.5A PPAK SC70-6
Detailed Description
P-Channel 20 V 4.5A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
2.9W (Ta), 15.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA425
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIA425EDJ-T1-GE3TR
SIA425EDJT1GE3
SIA425EDJ-T1-GE3CT
SIA425EDJ-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA425EDJ-T1-GE3
Documents & Media
Datasheets
1(SIA425EDJ)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SIA425EDJ)
Quantity Price
-
Substitutes
Part No. : SIA459EDJ-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 3
Unit Price. : $0.48000
Substitute Type. : Similar
Quantity Available. : 3
Unit Price. : $0.48000
Substitute Type. : Similar