China
Spain
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Italy
GermanyIPD110N12N3GBUMA1
Part Number Overview
Manufacturer Part Number
IPD110N12N3GBUMA1
Description
MOSFET N-CH 120V 75A TO252-3
Detailed Description
N-Channel 120 V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
-
Base Product Number
IPD110N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD110N12N3 G
IPD110N12N3G
SP000674466
IPD110N12N3 GCT
IFEINFIPD110N12N3GBUMA1
IPD110N12N3 GTR-ND
IPD110N12N3 GCT-ND
IPD110N12N3GBUMA1CT
IPD110N12N3GBUMA1DKR
IPD110N12N3 GDKR
2156-IPD110N12N3GBUMA1
IPD110N12N3 G-ND
IPD110N12N3 GDKR-ND
2156-IPD110N12N3GBUMA1-ITTR-ND
IPD110N12N3 GTR
IPD110N12N3GBUMA1TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD110N12N3GBUMA1
Documents & Media
Datasheets
1(IPx110N12N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPx110N12N3 G)
Quantity Price
-
Substitutes
Part No. : IPD110N12N3GATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 6,974
Unit Price. : $2.40000
Substitute Type. : Direct
Quantity Available. : 6,974
Unit Price. : $2.40000
Substitute Type. : Direct