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Part Number Overview
Manufacturer Part Number
IPI65R150CFD
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO262-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
189
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS CFD2™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2340 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
195.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPI65R150CFD
INFINFIPI65R150CFD
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI65R150CFD
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-