China
Spain
Rusia
Italy
GermanyPMZB200UNE315
Part Number Overview
Manufacturer Part Number
PMZB200UNE315
Description
SMALL SIGNAL N-CHANNEL MOSFET
Detailed Description
N-Channel 30 V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
5,668
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
250mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id
0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
89 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1006B-3
Package / Case
SC-101, SOT-883
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-PMZB200UNE315
NEXNXPPMZB200UNE315
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMZB200UNE315
Documents & Media
Datasheets
1(PMZB200UNE)
HTML Datasheet
1(PMZB200UNE)
Quantity Price
-
Substitutes
-