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Part Number Overview
Manufacturer Part Number
NTE2018
Description
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
Detailed Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA 1W Through Hole 18-PDIP
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
Transistor Type
8 NPN Darlington
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 350mA, 500A
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
1W
Frequency - Transition
-
Operating Temperature
-20°C ~ 85°C (TA)
Mounting Type
Through Hole
Package / Case
18-DIP (0.300", 7.62mm)
Supplier Device Package
18-PDIP
Base Product Number
NTE20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8542.31.0000
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NTE Electronics, Inc NTE2018
Documents & Media
Datasheets
1(NTE201x, NTE2020)
Environmental Information
()
HTML Datasheet
1(NTE201x, NTE2020)
Quantity Price
Quantity: 100
Unit Price: $3.04
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 50
Unit Price: $3.11
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 20
Unit Price: $3.29
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 10
Unit Price: $3.48
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 1
Unit Price: $3.66
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Substitutes
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