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Part Number Overview
Manufacturer Part Number
2SC3595D
Description
NPN EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor NPN 20 V 500 mA 2GHz 1.2 W Through Hole TO-126
Manufacturer
Sanyo
Standard LeadTime
Edacad Model
Standard Package
452
Supplier Stocks
Technical specifications
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
20 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Power - Max
1.2 W
Frequency - Transition
2GHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-2SC3595D
ONSSNY2SC3595D
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SC3595D
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 452
Unit Price: $0.66
Packaging: Bulk
MinMultiplier: 452
Packaging: Bulk
MinMultiplier: 452
Substitutes
-