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Part Number Overview
Manufacturer Part Number
PHB11N06LT,118
Description
MOSFET N-CH 55V 10.3A D2PAK
Detailed Description
N-Channel 55 V 10.3A (Tc) 33W (Tc) Surface Mount D2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
130mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
PHB11
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
PHB11N06LT /T3-ND
934055182118
PHB11N06LT /T3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHB11N06LT,118
Documents & Media
Datasheets
1(PHB,PHD,PHP11N06LT)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHB,PHD,PHP11N06LT)
Quantity Price
-
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