Part Number Overview

Manufacturer Part Number
IPI80N04S303AKSA1
Description
MOSFET N-CH 40V 80A TO262-3
Detailed Description
N-Channel 40 V 80A (Tc) 188W (Tc) Through Hole PG-TO262-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI80N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPI80N04S3-03
INFINFIPI80N04S303AKSA1
2156-IPI80N04S303AKSA1
IPI80N04S3-03-ND
SP000261238

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI80N04S303AKSA1

Documents & Media

Datasheets
1(IPx80N04S3-03)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev EOL 9/Sep/2019)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx80N04S3-03)

Quantity Price

-

Substitutes

Part No. : IPB80N04S403ATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 911
Unit Price. : $2.48000
Substitute Type. : Similar
Part No. : STI270N4F3
Manufacturer. : STMicroelectronics
Quantity Available. : 888
Unit Price. : $4.49000
Substitute Type. : Similar