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Part Number Overview
Manufacturer Part Number
FQNL2N50BBU
Description
MOSFET N-CH 500V 350MA TO92-3
Detailed Description
N-Channel 500 V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQNL2N50BBU Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Base Product Number
FQNL2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQNL2N50BBU
Documents & Media
Environmental Information
()
EDA Models
1(FQNL2N50BBU Models)
Quantity Price
-
Substitutes
-