Part Number Overview

Manufacturer Part Number
IPP13N03LB G
Description
MOSFET N-CH 30V 30A TO220-3
Detailed Description
N-Channel 30 V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1355 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP13N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPP13N03LBG
IPP13N03LB G-ND
SP000064224
IPP13N03LBGX
SP000680872

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP13N03LB G

Documents & Media

Datasheets
1(IPP13N03LB G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPP13N03LB G)

Quantity Price

-

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