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Part Number Overview
Manufacturer Part Number
BCR112WH6327XTSA1
Description
TRANS PREBIAS NPN 50V SOT323
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 140 MHz 250 mW Surface Mount PG-SOT323
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
140 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323
Base Product Number
BCR112
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
IFEINFBCR112WH6327XTSA1
2156-BCR112WH6327XTSA1
SP000750790
BCR 112W H6327-ND
BCR112WH6327XTSA1TR
BCR 112W H6327
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Infineon Technologies BCR112WH6327XTSA1
Documents & Media
Datasheets
1(BCR112)
Other Related Documents
1(Part Number Guide)
PCN Packaging
1(Reel Cover Tape Chg 16/Feb/2016)
HTML Datasheet
1(BCR112)
Quantity Price
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