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Part Number Overview
Manufacturer Part Number
TPCC8006-H(TE12LQM
Description
MOSFET N-CH 30V 22A 8TSON
Detailed Description
N-Channel 30 V 22A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVI-H
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 27W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-VDFN Exposed Pad
Base Product Number
TPCC8006
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TPCC8006-H(TE12LQMDKR
TPCC8006-H(TE12LQMCT
TPCC8006-H(TE12LQMTR
TPCC8006HTE12LQM
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TPCC8006-H(TE12LQM
Documents & Media
Datasheets
()
PCN Obsolescence/ EOL
1(EOL 08/Nov/2013)
HTML Datasheet
()
Product Drawings
()
Quantity Price
-
Substitutes
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