SPP11N60S5HKSA1

Part Number Overview

Manufacturer Part Number

SPP11N60S5HKSA1

Description

MOSFET N-CH 650V 11A TO220-3

Detailed Description

N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

Manufacturer

Infineon Technologies

Standard LeadTime

Edacad Model

Standard Package

500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Infineon Technologies

Series

CoolMOS™

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

54 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1460 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Base Product Number

SPP11N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

SPP11N60S5IN

SPP11N60S5X

SPP11N60S5

SPP11N60S5IN-NDR

SPP11N60S5IN-ND

SPP11N60S5XTIN

SPP11N60S5XTIN-ND

Documents & Media

Datasheets

1(SPP,SPI11N60S5)

Quantity Price

-

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SPP11N60S5HKSA1

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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