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Part Number Overview
Manufacturer Part Number
IPD180N10N3GBTMA1
Description
MOSFET N-CH 100V 43A TO252-3
Detailed Description
N-Channel 100 V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
-
Base Product Number
IPD180N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD180N10N3 GTR-ND
SP000482438
IPD180N10N3 G
IPD180N10N3GBTMA1CT
IPD180N10N3 GDKR-ND
IPD180N10N3G
IPD180N10N3 GCT
IPD180N10N3 GCT-ND
IPD180N10N3GBTMA1TR
IPD180N10N3 GDKR
IPD180N10N3GXT
IPD180N10N3 G-ND
IPD180N10N3GBTMA1DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD180N10N3GBTMA1
Documents & Media
Datasheets
1(IPD180N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Cover Tape Width Cancellation 14/Jul/2015)
HTML Datasheet
1(IPD180N10N3 G)
Quantity Price
-
Substitutes
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