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Part Number Overview
Manufacturer Part Number
NE3513M04-T2B-A
Description
RF MOSFET GAAS HJ-FET 2V 4MMOLD
Detailed Description
RF Mosfet 2 V 10 mA 12GHz 13dB 125mW 4-Super Mini Mold
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
310
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Technology
GaAs HJ-FET
Configuration
N-Channel
Frequency
12GHz
Gain
13dB
Voltage - Test
2 V
Current Rating (Amps)
60mA
Noise Figure
0.65dB
Current - Test
10 mA
Power - Output
125mW
Voltage - Rated
4 V
Package / Case
4-SMD, Flat Leads
Supplier Device Package
4-Super Mini Mold
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-NE3513M04-T2B-A-RETR
RENRNSNE3513M04-T2B-A
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/RF FETs, MOSFETs/Renesas Electronics Corporation NE3513M04-T2B-A
Documents & Media
Datasheets
1(NE3513M04-T2B-A)
Quantity Price
Quantity: 310
Unit Price: $0.97
Packaging: Bulk
MinMultiplier: 310
Packaging: Bulk
MinMultiplier: 310
Substitutes
-