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Part Number Overview
Manufacturer Part Number
RJK4006DPD-00#J2
Description
POWER FIELD-EFFECT TRANSISTOR
Detailed Description
N-Channel 400 V 8A (Ta) 65W (Tc) Surface Mount MP-3A
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
125
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MP-3A
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
RENRNSRJK4006DPD-00#J2
2156-RJK4006DPD-00#J2
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK4006DPD-00#J2
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 125
Unit Price: $2.4
Packaging: Bulk
MinMultiplier: 125
Packaging: Bulk
MinMultiplier: 125
Substitutes
-