Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
225mOhm @ 8A, 20V
Vgs(th) (Max) @ Id
3.26V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 1000 V
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D3PAK
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
MSC180