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Part Number Overview
Manufacturer Part Number
IPB021N06N3GATMA1
Description
MOSFET N-CH 60V 120A D2PAK
Detailed Description
N-Channel 60 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs
275 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
23000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB021N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPB021N06N3 GTR
IPB021N06N3GATMA1DKR
IPB021N06N3 GTR-ND
IPB021N06N3 GCT-ND
IPB021N06N3G
IPB021N06N3GATMA1CT
IPB021N06N3 GDKR-ND
IPB021N06N3 G-ND
IPB021N06N3 G
IPB021N06N3GATMA1TR
IPB021N06N3 GCT
SP000452248
IPB021N06N3 GDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB021N06N3GATMA1
Documents & Media
Datasheets
1(IPx021,24N06N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx021,24N06N3 G)
Quantity Price
-
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