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Part Number Overview
Manufacturer Part Number
BCR133SE6327BTSA1
Description
TRANS 2NPN PREBIAS 0.25W SOT363
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-PO
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
130MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
6-VSSOP, SC-88, SOT-363
Supplier Device Package
PG-SOT363-PO
Base Product Number
BCR133
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
BCR 133S E6327
BCR133SE6327XT
SP000010761
BCR 133S E6327-ND
BCR133SE6327BTSA1TR-NDTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Infineon Technologies BCR133SE6327BTSA1
Documents & Media
Datasheets
1(BCR133)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(BCR133)
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