Part Number Overview

Manufacturer Part Number
NTE227
Description
TRANS NPN 300V 0.1A TO237
Detailed Description
Bipolar (BJT) Transistor NPN 300 V 100 mA 200MHz 850 mW Through Hole TO-237
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks

Technical specifications

Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
1V @ 2mA, 20mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 10V
Power - Max
850 mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-237AA
Supplier Device Package
TO-237

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NTE Electronics, Inc NTE227

Documents & Media

Datasheets
1(NTE227 Datasheet)
Environmental Information
()
HTML Datasheet
1(NTE227 Datasheet)

Quantity Price

Quantity: 100
Unit Price: $2.22
Packaging: Bag
MinMultiplier: 1
Quantity: 50
Unit Price: $2.28
Packaging: Bag
MinMultiplier: 1
Quantity: 20
Unit Price: $2.41
Packaging: Bag
MinMultiplier: 1
Quantity: 10
Unit Price: $2.55
Packaging: Bag
MinMultiplier: 1
Quantity: 1
Unit Price: $2.68
Packaging: Bag
MinMultiplier: 1

Substitutes

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